General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charage for superior switching performance.

Features

• –4 A, –20 V. RDS(ON) = 0.065 Ω @ VGS = –4.5 V

RDS(ON) = 0.100 Ω @ VGS = –2.5 V

• Fast switching speed.

• Low gate charge (7.2 nC typical).

• High performance trench technology for extremely

low RDS(ON).

• SuperSOT™-6 package: small footprint (72 smaller

than standard SO-8); low profile (1mm thick)

Applications

• Load switch

• Battery protection

• Power management