General Description

The RMPA2259 power amplifier module (PAM) is designed for WCDMA/UTMS and HSDPA applications. The 2-stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

Features

• 40 CDMA efficiency at +28dBm average output power

• Single positive-supply operation and low power and shutdown modes

• Meets WCDMA/UTMS and HSDPA performance requirements

• Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm

• Industry standard pinout

• Internally matched to 50Ω and DC blocked RF input/output