DESCRIPTION

The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.

FEATURES

• Phototransistor output

• High Sensitivity

• Low cost plastic housing

• #26 AWG, 24 inch PVC wire termination

• Infrared transparent plastic covers for dust protection