General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

Features

■ -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V.

■ High density cell design for extremely low RDS(ON).

■ High power and current handling capability in a widely used surface mount package.