General Description

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features

• −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V

• Voltage controlled p-channel small signal switch

• High density cell design for low RDS(ON)

• High saturation current