General Description

These N-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits, and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 5.8A, 30V. RDS(ON) = 0.03Ω @ VGS = 10V

RDS(ON) = 0.045Ω @ VGS = 4.5V

■ High density cell design for extremely low RDS(ON).

■ Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability.