General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 80 A, 30 V

RDS(ON) = 6.5 mW @ VGS = 10 V

RDS(ON) = 8.5 mW @ VGS = 4.5 V

• Critical DC electrical parameters specified at

elevated temperature

• High performance trench technology for extremely

low RDS(ON)

• 175°C maximum junction temperature rating