General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features

• Fast switching

• rDS(ON) = 0.0019Ω (Typ), VGS = 10V

• rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V

• Qg (Typ) = 110nC, VGS = 5V

• Qgd (Typ) = 31nC

• CISS (Typ) = 11000pF

Applications

• DC/DC converters