Description

The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity.

Features

■ High isolation voltage

7500 VAC Peak—1 second

■ High BVCEO minimum 70 Volts

■ Current transfer ratio in selected groups:

MOC8111M: 20 min.

MOC8112M: 50 min.

MOC8113M: 100 min.

■ Maximum switching time in saturation specified

■ Underwriters Laboratory (UL) recognized

(File #E90700, Vol. 2)

■ IEC60747-5-2 approved (ordering option V)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls