DESCRIPTION

The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity

FEATURES

• High isolation voltage

5300 VAC RMS—1 minute

• High BVCEO minimum 70 Volts

• Current transfer ratio in selected groups:

MOC8111: 20 min.

MOC8112: 50 min.

MOC8113: 100 min.

• Maximum switching time in saturation specified

• Underwriters Laboratory (UL) recognized (File #E90700)

• VDE recognized (File #94766)

APPLICATIONS

• Power Supply Regulators

• Digital Logic Inputs

• Microprocessor Inputs

• Appliance Sensor Systems

• Industrial Controls