DESCRIPTION

The MOC223-M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications, and eliminates the need for through - the - board mounting.

FEATURES

• U.L. Recognized (File #E90700, Volume 2)

• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOC223V-M)

• Industry Standard SOIC-8 Surface Mountable Package with 0.050 lead spacing

• High Current Transfer Ratio of 500 Minimum at IF = 1 mA

• Standard SOIC-8 Footprint, with 0.050 Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

• High Input-Output Isolation Voltage of 2500 VAC(rms) Guaranteed

APPLICATIONS

• Low Power Logic Circuits

• Interfacing and coupling systems of different potentials and impedances

• Telecommunications equipment

• Portable electronics

• Solid state relays