DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

FEATURES

• UL Recognized (File #E90700, Volume 2)

• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)

• Convenient Plastic SOIC–8 Surface Mountable Package Style

• Low LED Input Current Required, for Easier Logic Interfacing

• Standard SOIC–8 Footprint, with 0.050” Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

• High Input–Output Isolation of 2500 Vac (rms) Guaranteed

APPLICATIONS

• Low power Logic Circuits

• Interfacing and coupling systems of different potentials and impedances

• Telecommunications equipment

• Portable electronics