Description

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.

Features

• Closely Matched Current Transfer Ratios

• Minimum BVCEO of 70 V Guaranteed

– MOC205M, MOC206M, MOC207M

• Minimum BVCEO of 30 V Guaranteed

– MOC211M, MOC212M, MOC213M, MOC216M,

MOC217M

• Low LED Input Current Required for Easier Logic

Interfacing

– MOC216M, MOC217M

• Convenient Plastic SOIC-8 Surface Mountable

Package Style, with 0.050 Lead Spacing

• Safety and Regulatory Approvals:

– UL1577, 2,500 VACRMS for 1 Minute

– DIN-EN/IEC60747-5-5, 565 V Peak Working

Insulation Voltage

Applications

• Feedback Control Circuits

• Interfacing and Coupling Systems of Different

Potentials and Impedances

• General Purpose Switching Circuits

• Monitor and Detection Circuits