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IRFI830中文资料
IRFI830数据手册规格书PDF详情
General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
• 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
IRFI830产品属性
- 类型
描述
- 型号
IRFI830
- 功能描述
MOSFET 500V N-Channel B-FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2022+ |
112 |
全新原装 货期两周 |
||||
IR/VISHAY |
25+ |
TO-220F220 |
45000 |
IR/VISHAY全新现货IRFI830GPBF即刻询购立享优惠#长期有排单订 |
|||
VISHAY |
11+ |
1800 |
TO-220FP |
||||
IR |
17+ |
TO-220FULLPAK(ISO) |
31518 |
原装正品 可含税交易 |
|||
onsemi(安森美) |
24+ |
I2PAK(TO-262) |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
东芝 |
24+ |
TO-220 |
50 |
||||
IR |
06+ |
TO220 |
4200 |
自己公司全新库存绝对有货 |
|||
IR |
15+ |
TO-220F |
11560 |
全新原装,现货库存,长期供应 |
|||
IR |
17+ |
TO-220F |
6200 |
||||
IR/VISHAY |
23+ |
TO-TO-220F |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IRFI830GPBF 价格
参考价格:¥5.1553
IRFI830 资料下载更多...
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FAIRCHILD相关芯片制造商
Datasheet数据表PDF页码索引
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