The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Features

• 100kHz Operation At 390V, 22A

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ= 125°C

• Low Conduction Loss