DESCRIPTION

The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

FEATURES

• High BVCEO

- Minimum 100 V for H11G1

- Minimum 80 V for H11G2

- Minimum 55 V for H11G3

• High sensitivity to low input current

Minimum 500 percent CTR at IF = 1 mA

• Low leakage current at elevated temperature (maximum 100 µA at 80°C)

• Underwriters Laboratory (UL) recognized File# E90700

APPLICATIONS

• CMOS logic interface

• Telephone ring detector

• Low input TTL interface

• Power supply isolation

• Replace pulse transformer