DESCRIPTION

The H11AG series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.

FEATURES

• High efficiency low degradation liquid epitaxial IRED

• Logic level compatible, input and output currents, with

CMOS and LS/TTL

• High DC current transfer ratio at low input currents

• Underwriters Laboratory (UL) recognized File #E90700

APPLICATIONS

• CMOS driven solid state reliability

• Telephone ring detector

• Digital logic isolation