General Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high interface in telephone sets.

Features

• N-Channel 1.3A, 60V, RDS(on) = 0.55 Ω @ VGS = 10 V

RDS(on) = 0.65 Ω @ VGS = 5 V

P-Channel -0.3A, -300V, RDS(on) = 15.5 Ω @ VGS = -10 V

RDS(on) = 16 Ω @ VGS =- 5 V

• Low gate charge ( typical N-Channel 1.6 nC)

( typical P-Channel 3.6 nC)

• Fast switching

• Improved dv/dt capability