General Description

These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features

• 3.0A, 500V, RDS(on) = 1.8Ω @VGS = 10 V

• Low gate charge (typical 13 nC)

• Low Crss ( typical 8.5 pF )

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating