Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features

• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V

• Low gate charge (typical 43 nC)

• Low Crss (typical 20pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 100ns)