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FQI4N80TU中文资料
FQI4N80TU数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 3.9 A, 800 V, RDS(on) = 3.6 Ω (Max.) @VGS = 10 V, ID = 1.95 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 8.6 pF)
• 100 Avalanche Tested
FQI4N80TU产品属性
- 类型
描述
- 型号
FQI4N80TU
- 功能描述
MOSFET 800V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-262 |
8950 |
BOM配单专家,发货快,价格低 |
|||
FAIRCHILD |
25+23+ |
TO-262 |
11779 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
23+ |
I2-PAKTO-262 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRCHILD/仙童 |
2447 |
TO-262 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD/仙童 |
21+ |
I2-PAKTO-262 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHILD/仙童 |
21+ |
TO-262 |
1167 |
||||
FAIRCHILD/仙童 |
24+ |
TO-262 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
21+ |
TO-262 |
6000 |
全新原装 公司现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
Fairchild/ON |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
FQI4N80TU 价格
参考价格：￥4.2065
FQI4N80TU 资料下载更多...
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FAIRCHILD相关芯片制造商
Datasheet数据表PDF页码索引
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