General Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on half bridge.

Features

• N-Channel 0.54A, 250V, RDS(on) = 2.0 Ω @ VGS = 10 V

P-Channel -0.54A, -250V, RDS(on) = 2.0 Ω @ VGS = -10 V

• Low gate charge ( typical N-Channel 6.0 nC)

( typical P-Channel 12.0 nC)

• Fast switching

• Improved dv/dt capability