General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has bl.

Features

• -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V

• Low gate charge ( typical 6.3 nC)

• Low Crss ( typical 18 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability