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FQB8N60CTM中文资料
FQB8N60CTM数据手册规格书PDF详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 7.5A, 600V, RDS(on)= 1.2Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
FQB8N60CTM产品属性
- 类型
描述
- 型号
FQB8N60CTM
- 功能描述
MOSFET 600V N-Channel Adv Q-FET C-Series
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
TO-263 |
6325 |
进口原装现货 |
|||
FAIRCHILD/仙童 |
24+ |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
|||
FAIRCHILD/仙童 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
FAIRCHILD |
11+PBF |
TO-263 |
50 |
普通 |
|||
FAIRCHILD |
21+正纳原装现货 |
TO-263 |
12000 |
十年以上分销商原装进口件服务型 |
|||
FAIRCHILD |
24+ |
TO-263 |
5000 |
十年沉淀唯有原装 |
|||
FAIRCHILD |
23+ |
TO-263 |
20000 |
||||
FAIRCHILD |
24+ |
TO-263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD |
24+ |
TO-263 |
5000 |
全新原装正品,现货销售 |
|||
FAIRCHILD/仙童 |
25+ |
TO263 |
2400 |
原装正品,假一罚十! |
FQB8N60CTM_WS 价格
参考价格:¥7.7599
FQB8N60CTM 资料下载更多...
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Datasheet数据表PDF页码索引
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Fairchild Semiconductor 飞兆/仙童半导体公司
Fairchild Semiconductor是一家曾经存在的半导体制造商,总部位于美国加州圣克拉拉。Fairchild Semiconductor成立于1957年,是最早期的半导体公司之一,专注于生产各种半导体器件,包括晶体管、集成电路、功率模块等产品。 Fairchild Semiconductor在半导体行业具有悠久的历史和丰富的经验,曾经是全球领先的半导体公司之一,其产品被广泛应用于消费电子、通信、工业、汽车等领域。Fairchild Semiconductor以其创新的技术和高性能的产品而闻名,拥有众多专利和技术成果。 2016年,Fairchild Semiconductor被ON