位置:FGP20N6S2D > FGP20N6S2D详情

FGP20N6S2D中文资料

厂家型号

FGP20N6S2D

文件大小

231.95Kbytes

页面数量

9

功能描述

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode

IGBT 晶体管 Comp N-CH 600V

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

FAIRCHILD

FGP20N6S2D数据手册规格书PDF详情

General Description

The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS).

These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.

SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

Features

• 100kHz Operation at 390V, 7A

• 200kHZ Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC

• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ

• Low Conduction Loss

• Low Eon

• Soft Recovery Diode

FGP20N6S2D产品属性

  • 类型

    描述

  • 型号

    FGP20N6S2D

  • 功能描述

    IGBT 晶体管 Comp N-CH 600V

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-12-4 9:09:00
供应商 型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
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TO-220
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TO-220
120
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15+
45670
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23+
TO-TO-220
12300
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8866
恩XP
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