General Description

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Features

• 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

Applications

• Load switch

• Battery protection

• Power management