General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON)in a small package.

Features

• 56 A, 30 V RDS(ON)= 9.5 mΩ@ VGS= 10 V

RDS(ON)= 13 mΩ@ VGS= 4.5 V

• Low gate charge (23nC typ.)

• Fast Switching

• High performance trench technology for extremely low RDS(ON)