General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V).

Features

· –5A, –20 V, RDS(ON)= 55 mW@ VGS= –4.5 V

RDS(ON)= 90 mW@ VGS= –2.5 V

· Extended VGSSrange (±12V) for battery applications

· Low gate charge

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability