General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Features

• –3.4 A, –30 V RDS(ON) = 130 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V

• Low gate charge (2.4nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Applications

• Power management

• Load switch

• Battery protection