General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

■ Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A

■ Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A

■ HBM ESD protection level of 5.6kV typical (note 3)

■ High performance trench technology for extremely low rDS(on)

■ High power and current handling capability

■ RoHS compliant