General Description

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

■ Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A

■ Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A

■ Low gate charge

■ High performance trench technology for extremely low rDS(on)

■ High power and current handling capability

■ RoHS compliant

Applications

■ DC - DC conversion