General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• Q1 4.1 A, 30V.

RDS(ON) = 80 mW @ VGS = 10 V

RDS(ON) = 130 mW @ VGS = 4.5 V

• Q2 –3.4 A, 30V.

RDS(ON) = 130 mW @ VGS = –10 V

RDS(ON) = 200 mW @ VGS = –4.5 V

• Low gate charge

• High performance trench technology for extremely low RDS(ON).

• High power and handling capability in a widely used

surface mount package.