General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

• 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V RDS(ON) = 5.0 mΩ @ VGS = 4.5 V

• Low gate charge

• Fast switching speed

• High power and current handling capability

• High performance trench technology for extremely low RDS(ON)

Applications

• DC/DC converter

• Load switch

• Motor drives