General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 16 A, 20 V. RDS(ON) = 6 mW @ VGS = 4.5 V RDS(ON) = 8 mW @ VGS = 2.5 V

• Low gate charge (57 nC)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Applications

• DC/DC converter