General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

• 23 A, 20 V. RDS(ON) = 3.5 mΩ @ VGS = 4.5 V RDS(ON) = 4 mΩ @ VGS = 2.5 V RDS(ON) = 6 mΩ @ VGS = 1.8 V

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

• Fast switching, low gate charge

• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

Applications

• Synchronous rectifier

• DC/DC converter