General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features

■ rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A

■ rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A

■ High performance trench technology for extremely low rDS(ON)

■ Low gate charge

■ High power and current handling capability

Applications

■ DC/DC converters