General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Features

• 11 A, 40 V. RDS(ON)= 13 mΩ@ VGS= 4.5 V

• High performance trench technology for extremely low RDS(ON)

• Low gate charge (35 nC typical)

• High power and current handling capability

• RoHS Compliant