General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 6.3 A, 100 V.

RDS(ON) = 32 mΩ @ VGS = 10 V

RDS(ON) = 35 mΩ @ VGS = 6 V

• Low gate charge (57 nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability