General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON)in a small package.

Features

· 4.1 A, 150 V. Rds(on) = 78mW@ Vgs= 10V

Rds(on) = 88mW@ Vgs= 6.0V

· High performance trench technology for extremely low Rds(on)

· High power and current handling capability

· Fast switching, low gate charge (38nC typical)

· FLMP SO-8 package: Enhanced thermal performance in industry-standard package size