General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.

Features

■ - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V.

■ SuperSOTTM-8 package: small footprint (40 less than SO-8);low profile (1mm thick);maximum power comperable to SO-8.

■ High density cell design for extremely low RDS(ON).