Description

This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has

been tailored to minimize the on-state resistance while maintain ing superior switching performance.

Features

• RDS(on) = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Applications

• Consumer Appliances

• LCD/LED/PDP TV

• Synchronous Rectification

• Uninterruptible Power Supply

• Micro Solar Inverter