Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features

• RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A

• Low Gate Charge ( Typ. 8.3nC)

• Low Crss ( Typ. 3.7pF)

• Fast Switching

• 100 Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

• RoHS Compliant