Features

Q1: N-Channel

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A

Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A

Q2: N-Channel

Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A

Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A

Low Inductance Packaging Shortens Rise/Fall Times, Resulting

in Lower Switching Losses

MOSFET Integration Enables Optimum Layout for

Lower Circuit Inductance and Reduced Switch

Node Ringing

RoHS Compliant