General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 52 A, 30 V. RDS(ON) = 0.0135 W @ VGS=10 V

RDS(ON) = 0.020 W @ VGS=4.5 V.

■ Improved replacement for NDP6030L/NDB6030L.

■ Low gate charge (typical 34 nC).

■ Low Crss (typical 175 pF).

■ Fast switching speed.