General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Features

• 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V.

• Critical DC electrical parameters specified at evevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• High performance trench technology for extremely low RDS(ON).

• 175°C maximum junction temperature rating.