General Description

This P -Channel Logic Level MOSFET is produced using FairchildSemiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance.

Feature s

· –2A, 20 V RDS(ON)= 70 mW@ VGS= –4.5 V

RDS(ON)= 110 mW@ VGS= –2.5 V

· Low gate charge (7.2 nC typical).

· High performance trench technology for extremely low R DS(ON).

· High power version of industry Standard SOT-23 package.Identical pin-out to SOT-23 with 30

higher power handling ca pability.