General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management

applications with a wide range of gate drive voltage(2.5V – 12V).

Features

• –20 V, –2.4 A. Rds(on)= 0.055 Ω@ Vgs= –4.5 V

Rds(on)= 0.080 Ω@ Vgs= –2.5 V

•Fast switching speed

•High performance trench technology for extremely low Rds(on)

•SuperSOT -3 provides low Rds(on) and 30 higher power handling capability than SOT23 in the same footprint