General Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

■ Max rDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A

■ Max rDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A

■ Max rDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A

■ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

■ RoHS Compliant