General Description

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Features

MOSFET

■ Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A

■ Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A

■ HBM ESD protection level > 2kV (Note 3)

Schottky

■ VF < 0.37V @ 500mA

■ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

■ RoHS Compliant

Application

■ DC - DC Conversion