General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.

Features

· –55 A, –35 V RDS(ON) = 11.6 mW @ VGS = –10 V

RDS(ON) = 18 mW @ VGS = –4.5 V

· High performance trench technology for extremely low RDS(ON)

· RoHS Compliant

Applications

· Inverter

· Power Supplies